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A UHV surface analysis system for thin film depth profiling

Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples

The Hiden SIMS Workstation provides for high performance static and dynamic SIMS applications for detailed surface composition analysis and depth profiling.

Overview

The SNMS facility complements the SIMS technique, providing quantification for thin film composition measurements.

Hiden’s new SIMS-on-a-Flange provides a complete SIMS facility on a single UHV conflat type flange.

Features

Specifications

Mass range

300, 510 or 1000 amu

Minimum detectable concentration

PPM/PPB level contamination analysis

SIMS - Secondary Ion Mass Spectrometry 

Yes

Analysis of ions ejected from sample surface

Yes (primary ions of oxygen, argon or caesium)

SNMS - Secondary Neutral Mass Spectrometry

Yes

Analysis of ions ejected from sample surface

Yes (primary ions of oxygen, argon or caesium)

Depth resolution

+/- 5 nanometer

Minimum detectable concentration - SIMS

1016 atoms per cubic centimeter - species dependent

Minimum detectable concentration - SNMS

0.01% - species dependant

UHV multiport chamber

Yes

Accommodates additional instrumentation

Yes (E.g. XPS)