A system for multiple source monitoring in MBE deposition applications
For molecular beam analysis and deposition rate control
Molecular beam sources require accurate control for reproducible production quality thin film growth. Hiden’s XBS system provides in-situ monitoring of multiple sources with real-time signal output for precise control of the deposition.
Overview
The high sensitivity and fast data acquisition of the XBS system provide signals for control of growth rates from 0.01 Angstrom per second.
Features
- High Sensitivity, Enhanced detection from 100% to 5ppb, mass range to 510 amu
- Enhanced long-term Stability (less than ±0.5% height variation over 24 h)
- Crossbeam ion source, beam acceptance through +/- 35° to transverse axis
- Ion source control for soft ionisation and appearance potential mass spectrometry
- Enhanced sensitivity for high mass transmission, Automatic mass scale alignment
- 2mm beam acceptance aperture – configured to specific user application
- Enhanced contamination resistance via the RF-only pre-filter stage
- Integral UHV compatible water-cooled shroud
- Detection limits down to 30 ions/second in molecular beam studies
- Monitor growth rates of 1Å/minute and lower
- Windows™ based MASsoft control via RS232, USB or Ethernet LAN
Specifications
|
Mass range |
320 or 510 amu |
|
Growth rate determination |
< 0.01 Angstrom per second, species dependant |
|
Cross beam ion source acceptance |
+/-35o Beam apertures - 3D modelled |
|
Data output |
Real time analogue signal outputs |
|
Residual gas analysis mode- RGA |
Leak detection and chamber vacuum analysis |