A UHV surface analysis system for thin film depth profiling
Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples
The Hiden SIMS Workstation provides for high performance static and dynamic SIMS applications for detailed surface composition analysis and depth profiling.
Overview
The SNMS facility complements the SIMS technique, providing quantification for thin film composition measurements.
Hiden’s new SIMS-on-a-Flange provides a complete SIMS facility on a single UHV conflat type flange.
Features
- Hiden MAXIM SIMS analyser operating under MASsoft 7 Professional for ppb analysis
- Integrated ioniser for efficient SNMS analysis
- Choice of differentially pumped primary excitation sources
- IG20 Gas, IG5C Caesium, IFG200 FAB or high performance liquid gallium guns
- Integral ion gun raster control with signal gating for depth profiling
- Electron flood gun option for charge neutralisation in insulator studies
- Vacuum chamber bakeout heaters
- Fast sample transfer, sample holder and manipulator with load lock
- UHV manipulator for optimum sample positioning
- SIMS elemental imaging option with ESM LabVIEW SIMS Imaging program
- Static SIMS Spectral Library available
- Automatic SIMS ion optics lens tuning
- Automatic mass alignment for optimum SIMS performance
Specifications
Mass range |
300, 510 or 1000 amu |
Minimum detectable concentration |
PPM/PPB level contamination analysis |
SIMS - Secondary Ion Mass Spectrometry |
Yes |
Analysis of ions ejected from sample surface |
Yes (primary ions of oxygen, argon or caesium) |
SNMS - Secondary Neutral Mass Spectrometry |
Yes |
Analysis of ions ejected from sample surface |
Yes (primary ions of oxygen, argon or caesium) |
Depth resolution |
+/- 5 nanometer |
Minimum detectable concentration - SIMS |
1016 atoms per cubic centimeter - species dependent |
Minimum detectable concentration - SNMS |
0.01% - species dependant |
UHV multiport chamber |
Yes |
Accommodates additional instrumentation |
Yes (E.g. XPS) |