Un cannone per ioni di Cesio a 5 KeV per applicazioni di analisi delle superfici in UHV

Sorgente di ioni primari per analisi SIMS/SNMS e mappatura delle specie elettronegative

The IG20 features a high brightness electron impact gas ion source which is designed specifically for oxygen capability but is also suitable for use with inert and other gases.


The IG20 is designed as primary ion beam for SIMS, Auger and XPS applications for imaging and depth profiling, however, the internally generated raster scan and wide range of operating parameters make it suitable for sample cleaning and surface science experiments. Twin user switchable filaments ensure continued operation in the case of a blown filament – which may be replaced at the user’s convenience.


  • Intense ion beam with 100 µm spot size and energies from 0.5 – 5 keV
  • High current density, up to 4.5 mA/cm2
  • Electron impact ion source with Argon and Oxygen capability
  • Steering optics for line scattering and beam rastering in depth profiling
  • 3° offset in the ion gun column for optimum rejection of neutrals
  • Beam blanking facility for rapid beam switching in rastering applications
  • Source differential pumping for reduced chamber gas load
  • Easily replaceable twin filament assembly
  • Sweep rates down to 64 µs
  • Integrated operation with SIM and EQS probes for direct raster rate / area control


Primary ion


Ion energy

0.5 to 5.0 KeV

Minimum spot diameter

20 micrometers

Deflection field for mapping

+/- 4 millimeters

Ion beam current

0.1 to 150 nA  

Maximum Etch Rate

30 nm/min for a silicon target