A system for ion etch control and optimum process quality
End Point detection for ion beam and plasma etch processes
The IMP-EPD is a differentially pumped, ruggedised secondary ion mass spectrometer for the analysis of secondary ions from the ion beam etch process. The system includes integrated software with process specific algorithms developed for optimum process control.
Overview
The IMP-EPD is a differentially pumped, ruggedised secondary ion mass spectrometer for the analysis of secondary ions from the ion beam etch process. The system includes integrated software with process specific algorithms developed for optimum process control.
The IMP-EPD system is process proven for the production of high specification thin film devices for applications including magnetic thin films, high temperature superconductors and III-V semiconductors.
Features
- High Sensitivity SIMS / MS with Pulse Ion Counting Detector
- Triple filter Quadrupole, 300 amu mass range is standard
- Differentially Pumped Manifold With Mounting Flange to Process Chamber
- Ion Optics with Energy Analyser and integral ioniser
- Penning Gauge and interlocks to provide over pressure protection
- Data System with integration to the process tool
- Stability (less than ±0.5% height variation over 24 h)
- MASsoft control via RS232, RS485 or Ethernet LAN
- Programmable DDE, Parallel Digital I / O, RS232 Scripting Communication
Specifications
|
Mass range |
300 or 510 amu |
|
Multi layer stack monitoring |
End point to +/- 5 Angstrom |
|
High sensitivity |
Operates with 99.9% masked wafers |
|
Automated |
Tool integrated automation recipes |
|
Layer counting |
Yes |
|
End point on selected interface |
Yes |
|
End point within multi-layered stack |
Yes |
|
Residual gas analysis mode - RGA |
Leak detection and chamber vacuum analysis |