Plasma characterisation, plasma ion analysers and langmuir probes
Thin film processing in research, development and functionalisation of surfaces has a broad application range in microelectronics, nanotechnology, solar, flat panel, mechanics, optics, photonics, textiles, coatings, chemistry, biology, and medicine.
Overview
Thin film processing utilises a wide range of techniques, including :
- Magnetron sputtering
- ALD - atomic layer deposition
- CVD - chemical vapour deposition
- MOCVD - metal organic chemical vapor deposition
- PECVD - plasma enhanced chemical vapor deposition
- MBE - molecular beam epitaxial growth
- RIE - plasma reactive ion etch
- IBE/RIBE - ion beam etch and reactive ion beam etc
Each technique is often tailored for a specific application, requiring special process parameters to produce the surface/film properties required. Hiden mass spectrometers provide critical insight into thin film processing and characterisation enabling optimisation of thin film production and surface quality.
Hiden mass spectrometers are used for process control including SIMS end point detection of ion beam etch of magnetic thin films, III-V layers including gallium arsenide, and superconducting thin films including YBaCuO yttrium barium copper oxide, and for flux monitoring where precise control of film growth in MBE is required.
Residual gas analyzers are used for process monitoring and leak detection, offering a unique window into the vacuum processing environment. Analysis of the partial pressures of vacuum residuals including water vapor, hydrocarbons, VOC's, and air leaks is routine.
The Hiden SIMS Workstation is used for post process analysis of thin films providing depth profiling and fine focus surface imaging of MBE grown thin films, glass coatings, magnetic thin films and metal oxides.
Hiden systems are individually configured to ensure optimum analyser response for sensitivity and speed.